inchange semiconductor isc product specification isc silicon npn power transistor 2SC5885 description high breakdown voltage- : v cbo = 1500v (min) wide area of safe operation built-in damper diode applications horizontal deflection output for tv, crt monitor applicaitions. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ces collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c collector current- continuous 6 a i b b base current- continuous 3 a i cp collector current-pulse 9 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC5885 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e = 500ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.75a b 2.5 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.75a b 1.5 v i cbo collector cutoff current v cb = 1000v; i e = 0 v cb = 1500v; i e = 0 50 1.0 a ma h fe dc current gain i c = 3a; v ce = 5v 5 10 v ecf c-e diode forward voltage i f = 3a 2.0 v f t current-gain?bandwidth product i c = 0.1a; v ce = 10v; f= 0.5mhz 3 mhz switching times; resistive load t stg storage time 5.0 s t f fall time i c = 3a, i b1 = 0.75a; i b2 = -1.5a 0.5 s isc website www.iscsemi.cn 2
|
